FCH104N60F N-Channel MOSFET
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 98 mW
• Ultra Low Gate Charge (Typ. Qg = 107 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF)
•.
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFET’s.
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